Method of making a VCSEL with passivation

Details Method of making a VCSEL with passivation Method of making a VCSEL with passivation

1995-02-06

1997-08-26

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 38, 438 41, H01L 2120

Patent

active

056610750

ABSTRACT:
A substrate (103) having a first stack of DBRs (106), an active region (118), and a second stack of DBRs (138) is provided. An etch mask (146) is formed on the second stack of DBRs (138) and etched. The second stack of DBRs (138), the active region (118), and a portion of the first stack of DBRs (106) are subsequently etched. A portion of the etch mask (146) is removed from the etch mask (146). A material layer (202, 302) is then selectively deposited on portions of the second stack of DBRs (138), the active region (118), and the first stack of DBRs (106) by either selective epitaxial over-growth or mass-transfer processes, thereby passivating the VCSEL (101).

REFERENCES:
patent: 5314838 (1994-05-01), Cho et al.
patent: 5316968 (1994-05-01), Choquette
patent: 5348912 (1994-09-01), Choquette et al.
patent: 5468656 (1995-11-01), Sheith et al.
patent: 5478774 (1995-12-01), Ackley et al.
patent: 5482891 (1996-01-01), Shieh et al.

Affiliated with

Also associated with

Rating

Method of making a VCSEL with passivation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a VCSEL with passivation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a VCSEL with passivation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1987982