Method of making a two-terminal non-volatile memory pillar...

Details Method of making a two-terminal non-volatile memory pillar... Method of making a two-terminal non-volatile memory pillar...

2011-06-07

2011-06-07

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

C257S005000, C257SE21645, C257SE45002, C438S585000, C438S268000, C438S270000

Reexamination Certificate

active

07955981

ABSTRACT:
A non-volatile memory device includes a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell containing a steering element and a storage element and at least one of a top corner or a bottom corner of each of the plurality of pillars is rounded. A method of making non-volatile memory device includes forming a stack of device layers, and patterning the stack to form a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell that contains a steering element and a storage element, and where at least one of top corner or bottom corner of each of the plurality of pillars is rounded.

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International Searching Authority/European Patent Office (ISA/EP). International Search Report and Written Opinion, International Application PCT/US10/38130. Nov. 8, 2010, 14 pages.

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