Method of making a trench dram cell

Details Method of making a trench dram cell Method of making a trench dram cell

1989-09-26

1990-12-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 38, 437 47, 437 60, 437203, 437919, H01L 2170

Patent

active

049803107

ABSTRACT:
A dynamic semiconductor memory device comprising a substrate having one trench including two capacitors for memory cell capacitances of two bits, and two elements such as transistors for reading, writing, and storing information represented by charge, arranged symmetrically at the central portion of the trench so as to correspond to the memory cells for two bits, and a field oxide film formed at the center of the trench on the bottom and on the side walls for separating the capacitors and elements.

REFERENCES:
patent: 4369564 (1983-01-01), Hiltpold
"Subthreshold Conduction in MOSFET's ", Geoffrey W. Taylor, IEEE Transactions on Electron Devices, vol. ED-26, No. 3, Mar. 1978.

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