Method of making a trench dram

Details Method of making a trench dram Method of making a trench dram

1988-12-09

1990-05-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 38, 437 60, 437203, 357 236, H01L 2172, H01L 21285

Patent

active

049218166

ABSTRACT:
In a semiconductor memory integrated circuit comprising a semiconductor substrate with a surface trench, a thick oxide film is formed to cover the inner wall of the trench substrate except part thereof where the inner wall is exposed. A cell capacitor comprises a lower electrode, a dielectric layer and an upper electrode, the lower electrode being in contact with the exposed part of the inner wall of the trench. A cell transfer transistor is formed in the semiconductor substrate adjacent to the cell capacitor, wherein one of the diffusion layers is in contact with the lower electrode of the cell capacitor at the exposed part of the inner wall of the trench.

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