Method of making a trench capacitor for dram

Details Method of making a trench capacitor for dram Method of making a trench capacitor for dram

1988-08-02

1989-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 60, 437 52, 437203, 437228, 437919, 437249, H01L 2193

Patent

active

048596221

ABSTRACT:
Two or three trenches are formed in a silicon substrate, and a conductive layer is formed in the silicon substrate facing the trenches. An oxide film for insulation is formed on a surface of the conductive layer facing the trenches. The trenches are filled with polysilicon, and the conductive layer and the polysilicon constitute a capacitor through the oxide film. Since this capacitor has two or three trenches, an effective area sufficiently large for increasing a capacitance value of the capacitor can be obtained without increasing the plane area of the device. The conductive layer and the polysilicon are connected to aluminum interconnection layers through a silicide layer, so as to be connected to other integrated circuits.

REFERENCES:
patent: 3962713 (1976-06-01), Kendall et al.
patent: 4650544 (1987-03-01), Erb et al.
patent: 4688064 (1987-08-01), Ogura et al.

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