Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1975-04-21
1976-06-01
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29572, 136 89, 156612, 313 94, 357 30, H01L 2120, H01L 2131, H01L 3100
Patent
active
039606201
ABSTRACT:
A flat substrate body of a single crystalline semiconductor material which is transparent to radiation but which can disassociate when subjected to heat is first coated on one surface with a coating of a transparent, anti-reflective material which will protect the body from disassociation. One or more layers of a single crystalline semiconductor material are then epitaxially deposited on another surface of the body under temperature conditions which could cause the disassociation of the material of the body. The last epitaxial layer deposited is of a material which is capable of generating electrons in response to incident radiation. A layer of a work function reducing material is then coated on the last epitaxial layer.
REFERENCES:
patent: 3391282 (1968-07-01), Kabell
patent: 3494809 (1970-02-01), Ross
patent: 3508126 (1970-04-01), Newman et al.
patent: 3549411 (1970-12-01), Bean et al.
patent: 3672992 (1972-06-01), Schaefer
patent: 3769104 (1973-10-01), Ono et al.
patent: 3913218 (1975-10-01), Miller
patent: 3914136 (1975-10-01), Kressel
Bruestle Glenn H.
Cohen Donald S.
RCA Corporation
Rutledge L. Dewayne
Saba W. G.
LandOfFree
Method of making a transmission mode semiconductor photocathode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making a transmission mode semiconductor photocathode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a transmission mode semiconductor photocathode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2401427