Method of making a transistor device

Details Method of making a transistor device Method of making a transistor device

1976-08-24

1977-08-09

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29583, 148186, H01L 2122

Patent

active

040408779

ABSTRACT:
A plurality of discrete transistor devices are produced on a semiconductor wafer and isolated from one another by moat etching. A passivation layer is then deposited in the moats separating the discrete transistor devices. The semiconductor wafer is then scribed and broken along lines delineated by the moats. The disclosed method permits testing of each discrete transistor device prior to separation from the wafer.

REFERENCES:
patent: 3394037 (1968-07-01), Robinson
patent: 3579815 (1971-05-01), Gentry
patent: 3664894 (1972-05-01), Einthoven et al.
patent: 3701696 (1972-10-01), Mets
patent: 3806361 (1974-04-01), Lehner
patent: 3859127 (1975-01-01), Lehner
patent: 3941625 (1976-03-01), Kennedy et al.
patent: 3943013 (1976-03-01), Kennedy et al.
patent: 3975221 (1976-08-01), Rodgers

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