Method of making a thin film transistor by overlapping annealing

Details Method of making a thin film transistor by overlapping annealing Method of making a thin film transistor by overlapping annealing

1993-11-03

1995-07-11

Nguyen, Nam

Fishing, trapping, and vermin destroying

437 40, 437173, 437233, 117 8, 117 10, H01L 2120

Patent

active

054321220

ABSTRACT:
The present invention provides a method of making a thin film transistor for driving a liquid crystal display comprising the steps of forming a gate electrode on a glass substrate and forming an insulating layer and an amorphous silicon layer in turn on said glass substrate and said gate electrode, and scanning laser beams on the surface of said amorphous silicon layer with the end portions of the respective scanned laser beams being overlapped. According to the method of making a thin film transistor for driving a liquid crystal display of the present invention, a thin film transistor suitable for HDTV, the field effect mobility of which is high, is achieved. Further, in making a thin film transistor, a separate processing step is not required and the number of processing steps can be reduced because constructional features of a TFT are utilized.

REFERENCES:
patent: 4309225 (1982-01-01), Fan et al.
patent: 4439245 (1984-03-01), Wu
Mortin et al. in "Displays, Technology and Applications", vol. 4(1), Jan. 1983, pp. 3-6.
Miyasaka et al. in Jap. Jr. Appl. Phys., vol. 30(12)B, Dec. 1991, pp. 3733-3740.
Little et al. in Jap. Jr. Appl. Phys., vol. 30(12)B, Dec. 1991, pp. 3724-3728.
Kuriyama et al. in "Jap. Jr. Appl. Phys.", vol. 30(12)B, Dec. 1991, pp. 3700-3703.

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