Method of making a thin film transistor

Details Method of making a thin film transistor Method of making a thin film transistor

1993-05-04

1995-04-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437101, 437909, 437186, 257 57, 257 59, H01L 21265

Patent

active

054098513

ABSTRACT:
A thin film transistor and a method of making the same, capable of reducing the step height between an insulating substrate and a gate electrode upon the anodization and thus preventing a short circuit at overlapping portions of the gate electrode and source/drain electrodes. The thin film transistor comprises a first metal layer as a gate electrode formed on an insulating substrate, an anodizable second metal layer having a line width larger than that of the first metal layer so as to cover the first metal layer, and an anodized film as a first gate insulating film formed by anodizing the second metal layer. The gate electrode and the anodized film serve as a gate insulating film. The gate insulating film can be also provided by forming a metal layer with a proper thickness over the insulating substrate, primarily anodizing a portion of the metal layer, forming a gate pattern forming layer over the anodized metal layer portion, and secondarily anodizing the metal layer except for its portion disposed beneath the gate pattern forming layer, to form a gate electrode. The anodized films are used as the gate insulating film.

REFERENCES:
patent: 5034340 (1991-07-01), Tanaka et al.
patent: 5102813 (1992-04-01), Kobayashi et al.
patent: 5120667 (1992-06-01), Tarui et al.
patent: 5231039 (1993-07-01), Sakono et al.
patent: 5240869 (1993-08-01), Nakatani

Affiliated with

Also associated with

Rating

Method of making a thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1567262