Method of making a thin film transistor

Details Method of making a thin film transistor Method of making a thin film transistor

1989-11-13

1990-12-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 29, 437 40, 437 62, 437 83, 437 86, 437186, 437915, 437974, 357 237, H01L 2170

Patent

active

049803085

ABSTRACT:
The present invention relates to a semiconductor device in which a semiconductor element is formed on a semiconductor layer (3) supported on a substrate (1) via at least insulating layers (2) and (4) as shown in FIGS. 1 and 2 and a method of fabricating the same. The semiconductor layer (3) has wiring layers (5) and (6) on both surfaces thereof, thus leading itself well for increasing the density of wiring and for increasing the operation speed in a large-scale integrated circuit device.

REFERENCES:
patent: 3624463 (1971-11-01), Davidsohn
patent: 4131909 (1978-12-01), Matsuda et al.
patent: 4139401 (1979-02-01), McWilliams et al.
patent: 4468857 (1984-09-01), Christian et al.
patent: 4784970 (1988-11-01), Solomon

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