Method of making a thin film resistor

Details Method of making a thin film resistor Method of making a thin film resistor

2010-01-15

2011-12-20

Ahmadi, Mohsen (Department: 2812)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S381000, C438S382000, C438S385000, C438S620000, C257SE21004, C257SE21006, C257SE21003, C257SE21495

Reexamination Certificate

active

08080461

ABSTRACT:
A method of making a thin film resistor includes: forming a doped region in a semiconductor substrate; forming a dielectric layer over the substrate; forming a thin film resistor over the dielectric layer; forming a contact hole in the dielectric layer before annealing the thin film resistor, wherein the contact hole exposes a portion of the doped region; and performing rapid thermal annealing on the thin film resistor after forming the contact hole.

REFERENCES:
patent: 7345573 (2008-03-01), Beach
patent: 2001/0046771 (2001-11-01), Steinmann et al.
patent: 2007/0008062 (2007-01-01), Fivas et al.
patent: 2007/0048960 (2007-03-01), Jaiswal et al.
patent: 2008/0132056 (2008-06-01), Beach

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