Method of making a tapered thickness waveguide intergrated semic

Details Method of making a tapered thickness waveguide intergrated semic Method of making a tapered thickness waveguide intergrated semic

1997-02-13

1998-08-11

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 40, H01L 2100

Patent

active

057926743

ABSTRACT:
Disclosed is a tapered thickness waveguide integrated semiconductor laser which has an active layer in which light emits and recombines; and an output tapered waveguide which facilitates an optical coupling to an optical fiber; wherein the active layer and the output tapered waveguide are monolithically integrated on a common substrate, and the output waveguide has a buried structure and the width and thickness of the output waveguide are smaller than those of the active layer. The active layer may be placed between two cladding layers each of which has a different conductivity type with each other, and the output tapered waveguide has a portion which contacts undoped cladding layer.

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patent: 5580818 (1996-12-01), Sakata
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InGaAsP/In Tapered Active Layer Multiquantum Well Laser with 1.8 dB Coupling Loss to Cleaved Singlemode Fibre, Electronics Letters, 29th Sep. 1994, vol. 30 No. 20, pp. 1685-1687.
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