Method of making a tandem type semiconductor photoelectric conve

Details Method of making a tandem type semiconductor photoelectric conve Method of making a tandem type semiconductor photoelectric conve

1989-01-30

1990-08-21

Lacey, David L.

Fishing, trapping, and vermin destroying

437 4, 437101, 437173, 1562722, 1562733, 156603, 148DIG4, H01L 2104

Patent

active

049506145

ABSTRACT:
A method of making a tandem type semiconductor photoelectric conversion device, comprising steps of: forming laminate member on a substrate by laminating first and second PIN structure of non-single crystal semiconductor in that order (or in the reverse order); forming an electrode on the laminate member; and crystallization an I-type layer of the second PIN structure by light irradiation (a) through the electrode (in this case, the electrode is transparent), or (b) from the side opposite from the substrate before formation of the electrode (or (a) from the side opposite from the substrate before formation of the first PIN structure, or (b) through the substrate (in this case, the substrate is transparent)).

REFERENCES:
patent: 4379943 (1983-04-01), Yang et al.
patent: 4387265 (1983-06-01), Dalal
patent: 4472456 (1984-09-01), Shah
patent: 4514579 (1985-04-01), Hanak
patent: 4536607 (1985-08-01), Wiesmann
patent: 4542578 (1985-09-01), Yamano et al.
patent: 4543443 (1985-09-01), Moeller et al.
patent: 4659422 (1987-04-01), Sakurai

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