Method of making a surface emitting light emitting diode

Details Method of making a surface emitting light emitting diode Method of making a surface emitting light emitting diode

1985-05-22

1987-03-03

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29569L, 29576E, 29580, 148172, 357 16, 372 46, H01L 21368

Patent

active

046473203

ABSTRACT:
A light-emitting diode and corresponding method for its fabrication, in which a blocking layer is used for current confinement, and a rectangular light emission pattern is employed, to avoid anisotropic effects when material systems such as indium phosphide are used. A critical step in the method of the invention is etching an opening through the blocking layer. The opening has its sides precisely oriented at forty-five degrees with respect to the cleavage planes of the substrate, to avoid exposing any crystal planes that are anisotropic.

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Hawrylo "LPE Growth of 1.3 um InGaAsP CW Lasers on (110) InP substrates", electron, Lett., vol. 17, No. 8, pp. 282-283, 16 Apr. 1981.
Nishitani "InGaAsP LPE Growth on InP and its Application to DH Lasers", Fuditsu Sci Tech J, vol. 18, no. 3, pp. 419-436, Sep. 1982.

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