Method of making a superlattice heterojunction bipolar device

Details Method of making a superlattice heterojunction bipolar device Method of making a superlattice heterojunction bipolar device

1989-01-04

1990-06-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG11, 148DIG56, 148DIG72, 148DIG97, 148DIG119, 148DIG160, 156613, 357 16, 357 34, 437 81, 437107, 437133, 437976, H01L 2120

Patent

active

049372041

ABSTRACT:
A semiconductor apparatus is disclosed, in which the entire or part of an electron active region is formed by a superlattice structure semiconductor layer in which a plurality of different semiconductor layers, less than 8 monolayers, and containing a fraction or a binary compound semiconductor layers are alternately and epitaxially grown and a main current direction is selected to be in the direction perpendicular to the laminae of said superlattice layers.

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patent: 4675709 (1987-06-01), Scifres et al.
patent: 4688068 (1987-08-01), Chaffin et al.

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