Method of making a substrate striped planar laser

Details Method of making a substrate striped planar laser Method of making a substrate striped planar laser

1974-12-09

1976-10-05

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148171, 148187, 148191, 357 16, 357 18, 331 945H, H01L 738

Patent

active

039842622

ABSTRACT:
A method of making a diode laser in which a pump current confining channel is formed on the n-side of the diode laser prior to the growth of the active region of the diode laser. The current confining channel is formed by providing two spaced regions in a substrate with the regions being highly resistive to current flow when the diode laser is forwarded biased. Preferably, the regions are formed by diffusion of an impurity into a substrate of a selected conductivity type so as to form secondary p-n junctions on both sides of an intermediate channel, with subsequent growth of other layers of the diode laser providing a primary p-n junction at the boundary of the active laser region. Forward biasing of the primary p-n junction results in reverse biasing of the secondary p-n junctions and pump current confinement to the channel.

REFERENCES:
patent: 3495140 (1970-02-01), Cornely et al.
patent: 3838359 (1974-09-01), Hakki et al.
patent: 3849790 (1974-11-01), Gottsmann et al.
Dumke et al., IBM Technical Disclosure Bulletin, vol. 16, No. 6, Nov. 1973, p. 1758.
Dumke, IBM Technical Disclosure Bulletin, vol. 16, No. 4, Sept. 1973, p. 1186.

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