Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2006-01-31
2006-01-31
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
C438S723000
Reexamination Certificate
active
06992008
ABSTRACT:
A method of making a substrate having a buried structure includes the steps of preparing a glass substrate having a principal surface, forming a groove on the principal surface of the glass substrate by a wet etching process, and depositing a first material over the principal surface of the glass substrate and filling the groove with the first material to form the buried structure having a surface that is substantially flush with the principal surface. The step of forming the groove includes the step of performing the wet etching process by using an etchant that includes hydrofluoric acid, ammonium fluoride, and hydrochloric acid or oxalic acid.
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Office Action from Korean Intellectual Property Office for corresponding Korean Application No. 10-2002-49762 mailed Jun. 25, 2004.
Fujino Kimiaki
Kobayashi Kazuki
Morimoto Akihiro
Ohmi Tadahiro
Sakono Ikuo
Blum David S.
Conlin David G.
Edwards Angell Palmer & & Dodge LLP
Hartnell, III George W.
Ohmi Tadahiro
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