Method of making a substantially planar semiconductor surface

Details Method of making a substantially planar semiconductor surface Method of making a substantially planar semiconductor surface

1992-03-30

1993-07-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 69, 437 33, 437 77, 437 26, 148DIG9, 148DIG116, H01L 2170

Patent

active

052253651

ABSTRACT:
A substantially planar semiconductor surface is formed for fabricating submicron BiCMOS integrated circuits. A lightly doped epitaxial layer is formed on a semiconductor substrate having buried layers formed therein. The substantially planar semiconductor surface is formed by forming a p-type well in the lightly doped epitaxial layer before the step of forming an n-type well in the lightly doped epitaxial layer.

REFERENCES:
patent: 4694562 (1987-12-01), Iwasaki et al.
patent: 5013671 (1991-05-01), Havemann
patent: 5075241 (1991-12-01), Spratt et al.
patent: 5079177 (1992-01-01), Lage et al.
patent: 5091322 (1992-02-01), Maeda et al.
patent: 5102811 (1992-04-01), Scott

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