Method of making a submicrometer local structure using an organi

Details Method of making a submicrometer local structure using an organi Method of making a submicrometer local structure using an organi

1992-12-04

1994-02-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437189, 437195, H01L 21465

Patent

active

052832082

ABSTRACT:
The invention relates to a method of making a local structure from an organic mandrel on a substrate at the submicrometer level. The mandrel is formed from an organic layer deposited on the substrate. The mandrel is then removed by exposure to an oxygen plasma environment, thus leaving a cavity. A local structure material is deposited into the cavity and polished to form the local structure. In the preferred method of the invention, an electrically conducting, local interconnect is formed from a polyimide mandrel on a wafer used to make integrated circuits.

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IBM Technical Disclosure Bulletin, J. P. Gambino et al., "Deep-Submicron Tungsten-Polysilicon Inverse-T Gate" vol. 34, No. 2, Jul. 1991.

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