Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having air-gap dielectric
Patent
1997-05-01
2000-02-08
Chang, Joni
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having air-gap dielectric
438430, H01L 2176
Patent
active
060227877
ABSTRACT:
A signal isolation and decoupling structure fabricated in an integrated circuit device for providing signal isolation and decoupling for signal carrying conductors of the integrated circuit device, wherein one of the conductors is embedded in dielectric material and enclosed within an isolation structure of an electrically conductive material which is formed in the integrated circuit device and extends substantially the length of the conductor, the isolation structure including top and bottom walls of electrically conductive material and first and side walls, also of an electrically conductive material, which electrically interconnect the top and bottom walls, forming an enclosure around the conductor. Also described is a method for fabricating the isolation structure in the integrated circuit device.
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Chang Joni
Micro)n Technology, Inc.
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