Method of making a strain buffer for a semiconductor device

Details Method of making a strain buffer for a semiconductor device Method of making a strain buffer for a semiconductor device

1979-09-20

1981-09-15

Gantz, Delbert E.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

357 65, 357 79, 204192C, 204192EC, 427 91, 427124, 427125, H01L 2334

Patent

active

042900808

ABSTRACT:
A thermally and electrically conductive strain buffer for a semiconductor device is made by a method that comprises the steps of (a) providing a plurality of straight, equal-length strands of copper, with the strands aligned such that their lengths are substantially parallel and their ends define a pair of opposing surfaces and (b) closing packing the strands together. Then, layers of highly conductive metal are deposited on said opposing surfaces, and the deposited metal layers provide sufficient structural integrity to hold the strands together so that the resulting strain buffer can be manipulated with substantially no break-up thereof and with substantially no loss of individual ones of the strands.

REFERENCES:
patent: 3128419 (1964-04-01), Waldkotter
patent: 3273029 (1966-09-01), Ross
patent: 3295089 (1966-12-01), Moore

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