Method of making a storage electrode of DRAM cell

Details Method of making a storage electrode of DRAM cell Method of making a storage electrode of DRAM cell

1993-10-20

1995-04-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437918, 437977, H01L 2170

Patent

active

054057990

ABSTRACT:
A storage electrode of a DRAM cell in a highly-integrated semiconductor device has, in order to secure the surface area thereof greater than that of a conventional tunnel-type storage electrode, an upper plate of storage electrode formed over a lower plate of storage electrode separated therefrom by a predetermined distance, while interposing bars of various shapes formed of a conductive layer to electrically connect the upper and lower plates, and a method for manufacturing the storage electrode is also provided.

REFERENCES:
patent: 5134086 (1992-07-01), Ahn
patent: 5149676 (1992-09-01), Kim et al.
patent: 5204280 (1993-04-01), Dhong et al.
patent: 5254503 (1993-10-01), Kenney
patent: 5256587 (1993-10-01), Jun et al.

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