Method of making a stable high voltage semiconductor device stru

Details Method of making a stable high voltage semiconductor device stru Method of making a stable high voltage semiconductor device stru

1996-12-09

1999-05-18

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Field plate electrode

H01L21/76

Patent

active

059045442

ABSTRACT:
A power integrated circuit device with multiple guard rings and field plates overlying regions between each of the guard rings. Each of the field plates form overlying a dielectric layer also between each of the guard rings. Multiple field plates can exist between each of such guard rings. At least one field plate couples to a main junction region, and another field plate couples to a peripheral region, typically a scribe line. The present power device structure with multiple guard rings and field plates provides a resulting guard ring structure which allows for such device to achieve higher voltage applications.

REFERENCES:
patent: H40 (1986-04-01), Buchanan, Jr. et al.
patent: 4399449 (1983-08-01), Herman et al.
patent: 4419684 (1983-12-01), Sakai et al.
patent: 4468686 (1984-08-01), Rosenthal
patent: 4573066 (1986-02-01), Whight
patent: 4691224 (1987-09-01), Takada
patent: 4757363 (1988-07-01), Bohm et al.
patent: 5094965 (1992-03-01), Ozaki et al.
patent: 5101244 (1992-03-01), Mori et al.
patent: 5279984 (1994-01-01), Kinoshita et al.
patent: 5334546 (1994-08-01), Terashima
patent: 5434445 (1995-07-01), Ravanelli et al.
patent: 5521419 (1996-05-01), Wakamiya et al.

Affiliated with

Also associated with

Rating

Method of making a stable high voltage semiconductor device stru does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a stable high voltage semiconductor device stru, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a stable high voltage semiconductor device stru will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1755826