Method of making a solid state inductor

Details Method of making a solid state inductor Method of making a solid state inductor

2005-04-05

2005-04-05

Mai, Anh (Department: 2832)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C336S200000, C029S602100

Reexamination Certificate

active

06876521

ABSTRACT:
A solid-state inductor and a method for forming a solid-state inductor are provided. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) thin film overlying the bottom electrode; forming a top electrode overlying the CMR thin film; applying an electrical field treatment to the CMR thin film in the range of 0.4 to 1 megavolts per centimeter (MV/cm) with a pulse width in the range of 100 nanoseconds (ns) to 1 millisecond (ms); in response to the electrical field treatment, converting the CMR thin film into a CMR thin film inductor; applying a bias voltage between the top and bottom electrodes; and, in response to the applied bias voltage, creating an inductance between the top and bottom electrodes. When the applied bias voltage is varied, the inductance varies in response.

REFERENCES:
patent: 6707122 (2004-03-01), Hines et al.

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