Method of making a solid-state imaging device

Details Method of making a solid-state imaging device Method of making a solid-state imaging device

2011-06-14

2011-06-14

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S006000, C438S007000, C438S016000, C257S432000, C257SE31127

Reexamination Certificate

active

07960197

ABSTRACT:
A solid-state imaging device includes the following elements. A photoelectric conversion section is arranged in a semiconductor layer having a first surface through which light enters the photoelectric conversion section. A signal circuit section is arranged in a second surface of the semiconductor layer opposite to the first surface. The signal circuit section processes signal charge obtained by photoelectric conversion by the photoelectric conversion section. A reflective layer is arranged on the second surface of the semiconductor layer opposite to the first surface. The reflective layer reflects light transmitted through the photoelectric conversion section back thereto. The reflective layer is composed of a single tungsten layer or a laminate containing a tungsten layer.

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Japanese Patent Office Action corresponding to Japanese Serial No. 2006-331559 dated Feb. 16, 2010.

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