Method of making a solar grade silicon wafer

Details Method of making a solar grade silicon wafer Method of making a solar grade silicon wafer

2007-03-21

2009-10-20

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

C117S004000, C422S245100, C438S492000, C438S500000

Reexamination Certificate

active

07604696

ABSTRACT:
A method of making a solar grade silicon wafer is disclosed. In at least some embodiments of this invention, the method includes the follow steps: providing a slurry including a liquid that essentially prevents the oxidation of silicon powder and a silicon powder that is essentially free of oxides; providing a solar grade wafer mold defining an interior for receiving the slurry; introducing the slurry into the solar grade wafer mold; precipitating the silicon powder from the slurry to form a preform of the solar grade silicon wafer; and crystallizing the preform to make the solar grade silicon wafer.

REFERENCES:
patent: 5431869 (1995-07-01), Kumar et al.
patent: 6013236 (2000-01-01), Takahashi et al.
patent: 2004/0048411 (2004-03-01), Nishida
patent: 2004/0055909 (2004-03-01), Lee et al.
patent: 2005/0145176 (2005-07-01), Wicker
patent: 2006/0142143 (2006-06-01), Abrevaya et al.
patent: 2006/0107769 (2006-10-01), Parthasarathy et al
patent: 101244823 (2008-08-01), None

Affiliated with

Also associated with

Rating

Method of making a solar grade silicon wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a solar grade silicon wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a solar grade silicon wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4068960