Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Patent
1996-10-21
1999-05-25
Nguyen, Nam
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
427 74, 136256, H01L 310216
Patent
active
059077662
ABSTRACT:
A silicon solar cell has increased efficiency by providing an anti-reflection and passivation layer comprising a layer of silicon dioxide thermally grown on a surface of a silicon body and a layer of titanium dioxide deposited on the layer of silicon oxide. In fabricating the composite anti-reflection passivation layer, a layer of aluminum is first deposited on a surface of the thermally grown silicon oxide. After annealing the aluminum layer, the aluminum is removed from the silicon dioxide layer, and the layer of titanium dioxide is then deposited on the surface of the silicon dioxide from which the aluminum was removed. A layer of magnesium fluoride can be deposited on the surface of the titanium dioxide.
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Sinton Ronald A.
Swanson Richard M.
Verlinden Pierre J.
Electric Power Research Institute Inc.
Miggins Mike
Nguyen Nam
Woodward Henry K.
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