Method of making a sloped insulator charge-coupled device

Metal working – Method of mechanical manufacture – Assembling or joining

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29576B, 29578, 29579, 29590, 148171, 148187, 156653, 156657, H01L 2120

Patent

active

043641644

ABSTRACT:
A charge-coupled device includes an insulation layer which is interfaced with a semiconductor wafer. Gating electrodes that are responsive to clocking signals are located on the surface of the insulation layer which is oppositely disposed from the interface with the semiconductor wafer such that the electric field produced by the potential on the electrodes has a substantial lateral component in the plane of the semiconductor-insulator interface. The lateral field component induced in the semiconductor wafer reduces the transfer time of charge carriers between adjacent electrodes thereby improving the transport response of the charge carriers to the clocking signals. A method for making the sloped oxide charge-coupled device is also described in which the insulation layer grown on a semiconductor is provided with sloped areas and the electrodes are evaporated onto these sloped areas to form the device's clocking structure.

REFERENCES:
patent: 4098638 (1978-04-01), Kub et al.
patent: 4123834 (1978-11-01), Bluzer
patent: 4216574 (1980-08-01), Feist

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