Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-05-04
1982-12-21
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 29579, 29590, 148171, 148187, 156653, 156657, H01L 2120
Patent
active
043641644
ABSTRACT:
A charge-coupled device includes an insulation layer which is interfaced with a semiconductor wafer. Gating electrodes that are responsive to clocking signals are located on the surface of the insulation layer which is oppositely disposed from the interface with the semiconductor wafer such that the electric field produced by the potential on the electrodes has a substantial lateral component in the plane of the semiconductor-insulator interface. The lateral field component induced in the semiconductor wafer reduces the transfer time of charge carriers between adjacent electrodes thereby improving the transport response of the charge carriers to the clocking signals. A method for making the sloped oxide charge-coupled device is also described in which the insulation layer grown on a semiconductor is provided with sloped areas and the electrodes are evaporated onto these sloped areas to form the device's clocking structure.
REFERENCES:
patent: 4098638 (1978-04-01), Kub et al.
patent: 4123834 (1978-11-01), Bluzer
patent: 4216574 (1980-08-01), Feist
Bluzer Nathan
Jensen Arthur S.
Malmberg Paul R.
Schroder Dieter K.
Ozaki G.
Westinghouse Electric Corp.
Zitelli W. E.
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