Method of making a single-crystal-silicon 3D micromirror

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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C438S459000, C385S016000, C385S017000, C385S018000, C359S290000, C359S291000

Reexamination Certificate

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07091057

ABSTRACT:
First and second n-doped regions are formed at a surface of a p-doped single crystal silicon substrate. An aluminum layer is patterned overlying some of the second n-doped regions to form thermal actuators. A dielectric layer is deposited overlying the patterned aluminum layer and an underlying thermal oxide layer. A metal layer is deposited thereover and patterned to form bond pads to the thermal actuators and to form reflecting mirror surfaces overlying others of the second n-doped regions to form micromirrors. The substrate is etched away from the backside stopping at the first and second n-doped regions. Then the wafer is diced into mirror array chips. Portions of the first n-doped regions are etched away from the frontside to form flexible springs wherein the second n-doped regions covered by the patterned aluminum layer form thermal actuators and wherein the flexible springs connect the micromirrors to the thermal actuators.

REFERENCES:
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patent: 6480320 (2002-11-01), Nasiri
patent: 6504643 (2003-01-01), Peeters et al.
patent: 6556737 (2003-04-01), Miu et al.
patent: 6563106 (2003-05-01), Bowers et al.
patent: 6861277 (2005-03-01), Monroe et al.
“Micromirrors for Adaptive-optics Arrays,” by Michael A. Helmbrecht et al.,Transducers '01 Eurosensors XV, Jun. 2001.
“Three-dimensional structures obtained by double diffusion and electrochemical etch stop” by S.Marco et al.,Jrnl of Micromech. Microeng. 3(1993), pp. 141-142.

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