Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2006-08-15
2006-08-15
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S459000, C385S016000, C385S017000, C385S018000, C359S290000, C359S291000
Reexamination Certificate
active
07091057
ABSTRACT:
First and second n-doped regions are formed at a surface of a p-doped single crystal silicon substrate. An aluminum layer is patterned overlying some of the second n-doped regions to form thermal actuators. A dielectric layer is deposited overlying the patterned aluminum layer and an underlying thermal oxide layer. A metal layer is deposited thereover and patterned to form bond pads to the thermal actuators and to form reflecting mirror surfaces overlying others of the second n-doped regions to form micromirrors. The substrate is etched away from the backside stopping at the first and second n-doped regions. Then the wafer is diced into mirror array chips. Portions of the first n-doped regions are etched away from the frontside to form flexible springs wherein the second n-doped regions covered by the patterned aluminum layer form thermal actuators and wherein the flexible springs connect the micromirrors to the thermal actuators.
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Agarwal Ajay
Gan Chih Kiong Terence
Singh Janak
Zhang Xiaolin
Ackerman Stephen B.
Agency for Science Technology and Research
Le Dung A.
Pike Rose Mary L. S.
Saile Ackerman LLC
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