Method of making a silicon-on-insulator transistor

Details Method of making a silicon-on-insulator transistor Method of making a silicon-on-insulator transistor

1986-05-15

1988-07-05

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 84, H01L 2138

Patent

active

047554819

ABSTRACT:
A silicon-on-insulator (SOI) device is fabricated by forming at least one island of semiconductor material on a surface of an insulating material. Silicon is then formed on the areas which surround the at least one island. The silicon is oxidized to form silicon dioxide regions which surround the at least one island.

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