Method of making a silicon nitride resistor using plasma enhance

Details Method of making a silicon nitride resistor using plasma enhance Method of making a silicon nitride resistor using plasma enhance

1986-11-12

1988-07-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 60, 437193, 437200, 437190, 437241, 437918, 148DIG114, 148DIG136, 357 51, H01C 710, H01L 2904

Patent

active

047554800

ABSTRACT:
An improved resistor for use in MOS integrated circuits. An opening is formed in an insulative layer which separates two conductive regions. A plasma enhanced chemical vapor deposition of passivation material such as silicon-rich silcon nitride is deposited in the window, contacting both conductive regions and providing resistance in a vertical direction between these regions.
A subsequent annealing process involving controlled temperatures and cycle times provides for determining desired resistive values from an equivalent deposition process. Further, a barrier metal layer may be formed between the vertical resistor and the second conductive region.

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Ghandhi, "VLSI Fabrication Principles", John Wiley & Sons, New York, NY, 4/5/1984, pp. 427-429 & 435-437.
Adams, "VLSI Technology" edited by Sze, McGraw-Hill, 1983, pp. 120-123.

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