Method of making a silicon-based device comprising surface plasm

Details Method of making a silicon-based device comprising surface plasm Method of making a silicon-based device comprising surface plasm

1992-11-10

1995-05-09

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437937, 437946, 148DIG17, 134 1, H01L 2120

Patent

active

054139546

ABSTRACT:
A novel vapor phase Si cleaning process comprises simultaneous exposure of the Si surface to a flux of neutral atomic hydrogen and to a flux of ionized particles. The former flux is substantially derived from a plasma, typically a microwave plasma, that is spaced apart from a second plasma, typically a RF plasma, from which the ionized particles are derived. The novel method can be implemented at relatively low cost and facilitates adjustment of the ratio between the two fluxes to result in optimal removal of, e.g., native oxide from the surface.

REFERENCES:
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"An Optimized in Situ Argon Sputter Cleaning Process for Device Quality Low-Temperature (T<800.degree. C.) Epitaxial Silicon: Bipolar Transistor and pn Junction Characterization", by W. R. Burger et al., J. Appl. Phys., vol. 62(10, 15 Nov. 1987, pp. 4255-4268.
"Plasma Cleaned Si Analyzed in Situ by X-ray Photoelectron Spectroscopy, Secondary Ion Mass Spectrometry, and Actinometry", by M. Delfino, J. Appl. Phys., vol. 71 (2), 15 Jan. 1992, pp. 1001-1009.
"Low-temperature in Situ Surface Cleaning of Oxide-patterned Wafers by Ar/H.sub.2 Plasma Sputter", by T. Yew, J. Appl. Phys., vol. 68 (9), 1 Nov. 1990, pp. 4681-4693.

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