Method of making a short gate field effect transistor

Details Method of making a short gate field effect transistor Method of making a short gate field effect transistor

1978-02-02

1979-03-20

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

156643, 156662, 204 15, 204192R, 427 89, 427 92, 427124, 427259, H01L 2128, H01L 21285, H01L 21302

Patent

active

041454596

ABSTRACT:
A short gate field effect transistor having a gate on the bottom of a recess in a body of semiconductor material with the source and drain being on the surface of the semiconductor body at opposite sides of the recess is made by providing a metal film on the surface of the semiconductor body with the metal film having an opening therein. A recess is formed in the portion of the semiconductor body in the opening in the metal film. While protecting the bottom portion of the recess, metal films are plated up on each side of the recess until the spacing between the metal films across the recess is equal to the desired length of the gate. The gate is then deposited on the bottom of the recess using the plated metal films as a mask to control the length of the gate.

REFERENCES:
patent: 3764865 (1973-10-01), Napoli et al.
patent: 3898353 (1975-08-01), Napoli et al.
patent: 3920861 (1975-11-01), Dean
patent: 3951708 (1976-04-01), Dean

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