Method of making a semiconductor thin-film

Details Method of making a semiconductor thin-film Method of making a semiconductor thin-film

1994-05-12

1996-07-02

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

117913, 437109, 437247, 437967, 437973, 148DIG1, 148DIG3, H01L 2120

Patent

active

055311822

ABSTRACT:
Polycrystalline silicon thin-films having a large grain size are formed by preparing a substrate of amorphous surface comprising first regions containing tin atoms at a higher content and second regions containing tin atoms at a lower content or not substantially containing them, and then heat-treating the substrate to grow crystal grains from crystal nuclei formed only in the first regions.

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