Method of making a semiconductor substrate having gettering effe

Details Method of making a semiconductor substrate having gettering effe Method of making a semiconductor substrate having gettering effe

1996-06-24

1998-02-24

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437233, 437241, 437DIG968, 437DIG978, H01L 21306

Patent

active

057211450

ABSTRACT:
The present invention is mainly characterized in that a semiconductor substrate improved so as to maintain a gettering effect for a long time can be obtained. A polycrystalline silicon film is formed on the rear surface of a semiconductor substrate. A silicon oxide film and silicon nitride film are formed over the rear surface of semiconductor substrate so as to cover polycrystalline silicon film.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 4525239 (1985-06-01), Wang
patent: 4561171 (1985-12-01), Schlosser
patent: 4621414 (1986-11-01), Iranmanesh
patent: 4631804 (1986-12-01), Roy
patent: 4766086 (1988-08-01), Ohshima et al.
patent: 5130260 (1992-07-01), Suga et al.
patent: 5189508 (1993-02-01), Tachimori et al.
patent: 5194395 (1993-03-01), Wada
patent: 5327007 (1994-07-01), Imura et al.
patent: 5374842 (1994-12-01), Kusakabe
patent: 5444001 (1995-08-01), Tokuyama
patent: 5559052 (1996-09-01), Lee et al.
Hermann Franke, Lexikon der Physik, 1969, pp. 1088 & 1813 (with English Language Translation).
Dr. Happel, Niedershcrift uber die Anhorung, pp. 2-4 (with English Language Translation).
Wolf et al., "Silicon Processing for the VLSI Era," vol. I, Lattice Press, 1986, pp. 191-195.

Affiliated with

Also associated with

Rating

Method of making a semiconductor substrate having gettering effe does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor substrate having gettering effe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor substrate having gettering effe will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1874769