Method of making a semiconductor ROM device

Details Method of making a semiconductor ROM device Method of making a semiconductor ROM device

1988-01-12

1989-08-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 43, 437 47, 437 52, 437193, 437228, H01L 21265

Patent

active

048552488

ABSTRACT:
A read only memory contains a conductive layer of polysilicon which contacts the drains of memory cell MOS transistors and lies near and on a gate electrode. A data line made of aluminum and the drain of the MOS transistors are interconnected through the conductive layer. A method of manufacturing the ROM such structure is also disclosed.

REFERENCES:
patent: 4432073 (1984-02-01), Masuoka

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