Method of making a semiconductor memory device with recessed arr

Details Method of making a semiconductor memory device with recessed arr Method of making a semiconductor memory device with recessed arr

1988-04-22

1989-11-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 38, 437 47, 437 60, 437228, 437235, H01L 21308, H01L 2478

Patent

active

048822892

ABSTRACT:
A semiconductor memory wherein a memory cell region having a plurality of memory cells and has higher altitude from the surface of semiconductor substrate is formed in the recessed part of semiconductor substrate having the recessed part and projected part and a peripheral circuit region which is comparatively low from the surface of semiconductor substrate is formed to the projected part of semiconductor substrate.

REFERENCES:
patent: 4642880 (1987-02-01), Mizutani et al.
patent: 4685197 (1987-08-01), Tigelaar et al.
Nicky C. C. Lu, "Advanced Cell Structures for Dynamic Rams". IEEE Circuits and Devices Magizine., vol. 5, No. 1, Jam. 89, pp. 27-36.
VLSI Device Handbook, Nov. 28, 1983, Science Forum Co., pp. 139-141.

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