Method of making a semiconductor memory device

Details Method of making a semiconductor memory device Method of making a semiconductor memory device

1990-04-09

1990-12-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 38, 437 47, 437 60, 437203, 437228, 437915, 437919, H01L 2170

Patent

active

049786350

ABSTRACT:
The present invention provides a semiconductor memory device comprising a MOSFET (16) and a storage capacity element (15) and performing data writing/reading.
The MOSFET (16) is formed on a main surface of a silicon substrate (1) and a storage capacity element (15) is formed on a surface of the reverse side of the silicon substrate (1). The MOSFET (16) comprises source and drain regions (3, 4) formed on the main surface of the silicon substrate (1), a channel region (17) positioned therebetween and a word line forming a gate electrode (9a).
A trench (5) is formed in the surface of the reverse side of the silicon substrate (1) and the storage capacity element (15) comprises an insulating film (2) formed on the whole surface of the reverse side of the silicon substrate (1) including an inner wall surface of this trench, a cell plate electrode (7) formed on the surface of the reverse side of the silicon substrate (1) including the inside of the trench (5), and a diffusion region (13) of a memory cell portion connecting the insulating film (2) and the MOSFET (16).

REFERENCES:
patent: 3659159 (1972-05-01), Nagalta
Nicky C. C. Lu "Advanced Cell Structures for Dynamic RAMS" IEEE Circuits and Devices Magazine Jan. 1989 pp. 27-36.

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