Method of making a semiconductor memory device

Details Method of making a semiconductor memory device Method of making a semiconductor memory device

1993-04-13

1994-05-17

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437 89, 437919, H01L 2170

Patent

active

053127692

ABSTRACT:
A semiconductor memory device in which a storage electrode of a storage capacitor of a memory cell is formed by a selective chemical vapor deposition (CVD) technique. A lithography process is not required when forming the storage electrode. There is no narrowing of the storage electrode pattern and the minimum distance between adjacent storage electrodes can be made smaller than the minimum wiring dimension. The storage capacitance of the semiconductor memory device can be increased and a high storage capacitance is obtained.

REFERENCES:
patent: 5045494 (1991-09-01), Choi et al.
patent: 5108943 (1992-04-01), Sandhu et al.
patent: 5128273 (1992-07-01), Ema
A. Sudo et al., "Buried Bit Line (BBL) cell Process Technology for High Density DRAMs", with English translation.

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