Method of making a semiconductor memory device

Details Method of making a semiconductor memory device Method of making a semiconductor memory device

1993-08-04

1995-07-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437 69, H01L 218229

Patent

active

054321131

ABSTRACT:
A method of manufacturing a semiconductor memory device including at least one memory cell having a transistor and a capacitor, forming at least one trench in a surface of a semiconductor substrate, forming a semiconductor film covering the surface of the semiconductor substrate and an inner wall of the trench, forming an oxidation-resistant film to cover at least a first part of the semiconductor film covering the inner wall of the trench including a bottom surface of the trench, and oxidizing a second part of the semiconductor film, which is not covered by the oxidation-resistant film, thereby to form an element isolation insulating film.

REFERENCES:
patent: 4855953 (1989-08-01), Tsukamoto et al.
patent: 5198386 (1993-03-01), Gonzalez
patent: 5258321 (1993-11-01), Shimizu et al.
patent: 5273928 (1993-12-01), Tani
Isolation Process Using Polysilicon Buffer Layer for Scaled MOS/VSLI, Yu-Pin Han and Ring Ma, The Electrochemical Society Extended Abstract, 1984.

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