Method of making a semiconductor memory device

Details Method of making a semiconductor memory device Method of making a semiconductor memory device

1988-01-27

1989-05-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 48, 437 51, 437 61, 437187, 437229, H01L 2170

Patent

active

048309770

ABSTRACT:
A semiconductor memory device having wiring formed next to word lines at the extreme ends of the memory cell arrays or next to word lines of the dummy cell arrays, in order to prevent such word lines from breaking or from becoming deformed. The wiring is irrelevant to the circuit operation, but is provided with a fixed potential, and is formed through the steps of forming the word lines. The wiring makes the processing conditions applied to the neighboring word lines the same as the processing conditions applied to other word lines.

REFERENCES:
patent: 4449207 (1984-05-01), Kung et al.
patent: 4685089 (1987-08-01), Patel et al.
patent: 4713678 (1987-12-01), Womack et al.

Affiliated with

Also associated with

Rating

Method of making a semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2322325