Method of making a semiconductor memory device

Details Method of making a semiconductor memory device Method of making a semiconductor memory device

1993-05-05

1994-04-12

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, H01L 2170

Patent

active

053025423

ABSTRACT:
A semiconductor substrate according to the present invention includes a first semiconductor substrate of a first conductivity type, an insulating film selectively formed in the first semiconductor substrate to define an exposed surface region, and a second semiconductor substrate of a second conductivity type opposite to the first conductivity type being bonded to the first semiconductor substrate. A DRAM cell formed by using the semiconductor substrate includes a trench capacitor formed in the first semiconductor substrate through both the second semiconductor substrate and the exposed surface region, and a transfer transistor formed in the second semiconductor substrate.

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