Method of making a semiconductor memory device

Details Method of making a semiconductor memory device Method of making a semiconductor memory device

1991-09-12

1993-02-09

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437919, H01L 2170

Patent

active

051852845

ABSTRACT:
A semiconductor memory device which is provided with a groove type capacitor and which has been improved for increasing its storage capacity without lowering the degree of integration, and the method for producing the memory device. The device includes a first capacitor including a storage node (16) formed on the inner wall of the groove (15), a capacitor insulating film (20) and a cell plate electrode (22), a second capacitor including an electrically conductive member (43) provided on the permitter of the groove (15), the capacitor insulating film (20) and the cell plate electrode (22). The semiconductor member device has its storage capacity increased by an amount corresponding to the capacity of the second capacitor. The degree of integration is not lowered in any way since the electrically conductive member (43) forming the second capacitor is provided on the groove (15) perimeter. The method for producing the semiconductor member device is improved such that high accuracy mask matching is not required during groove (15) formation so that the production efficiency is significantly improved.

REFERENCES:
patent: 4645564 (1987-02-01), Morie et al.
Watanabe, "Stacked Capacitor Cells for High Density Dynamic RAMS" IEDM 1988 pp. 600-603.

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