Method of making a semiconductor memory circuit device

Details Method of making a semiconductor memory circuit device Method of making a semiconductor memory circuit device

1993-08-10

1995-02-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 44, 437 47, 437 48, 437 60, H01L 2170

Patent

active

053895584

ABSTRACT:
In a semiconductor memory circuit device wherein each memory cell is constituted by a series circuit of a memory cell selecting MISFET and an information storing capacitor of a stacked structure, there are present in a first region as a memory cell array region a first MISFET having a gate electrode and source and drain regions; first and second capacity electrodes and a dielectric film extending onto a first insulating film on the gate electrode; a second insulating film positioned on the second capacity electrode; and a first wiring positioned on the second insulating film, while in a second region as a peripheral circuit region there are present a second MISFET having a gate electrode and source and drain regions; a first insulating film on the gate electrode; a third insulating film on the first insulating film; a second insulating film on the third insulating film; and a second wiring on the second insulating film.

REFERENCES:
patent: 4742018 (1988-05-01), Kimura et al.
patent: 4882289 (1989-11-01), Moriuchi et al.
patent: 4937645 (1990-06-01), Ootsuka et al.
patent: 4951175 (1990-08-01), Kurosawa et al.
patent: 5081515 (1992-01-01), Murata et al.
patent: 5202275 (1993-04-01), Sugiura et al.
IEDM 88, pp. 592-595.

Affiliated with

Also associated with

Rating

Method of making a semiconductor memory circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor memory circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor memory circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-287495