Method of making a semiconductor light emitting device using out

Details Method of making a semiconductor light emitting device using out Method of making a semiconductor light emitting device using out

1989-09-25

1990-10-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG37, 148DIG95, 437 97, 437133, 437161, 437987, H01L 21203, H01L 21225

Patent

active

049607308

ABSTRACT:
A buried stripe semiconductor light emitting device and a method for producing the device in which the buried stripe functions as an internal resonator, and the device has window regions interposed between the resonator and facets on the external surface of the device. A first phase crystal growth is conducted in which a first cladding layer is grown on a doped substrate. Thereafter, a doped stripe of impurities is introduced into the first cladding layer in electrical contact with the doped substrate. The doped stripe extends longitudinally but terminates short of the facets so that later out-diffusion from the doped stripe will form the window regions. A second phase crystal growth is then conducted which buries the doped stripe internal to the semiconductor, i.e., not projecting through any external surface. The second phase crystal growth comprises an active layer, a second cladding layer and a contact layer successively grown on the first cladding layer. Impurities from the buried doped stripe are out-diffused into the active layer to the boundary between the active layer and the second cladding layer to form the resonator, leaving windows interposed between the resonator ends and the facets.

REFERENCES:
patent: 4329660 (1982-05-01), Yang et al.
patent: 4511408 (1985-04-01), Holanyak, Jr.
patent: 4654090 (1987-03-01), Burnham et al.
patent: 4771010 (1988-09-01), Epler et al.
patent: 4810670 (1989-03-01), Furuyama et al.
patent: 4824798 (1989-04-01), Burnham et al.
patent: 4830983 (1989-05-01), Thornton
patent: 4843032 (1989-06-01), Tokuda et al.
Meehan et al., "Disorder of an AlGaAs-GaAs Superlattice by Donor Diffusion", Appl. Phys. Lett., 45(5), Sep. 1, 1984, pp. 549-551.
Thornton et al., "Highly Efficient, Long Lived AlGaAs Lasers, Fabricated by Silicon Impurity Disordering", Appl. Phys. Lett., 49(3), Jul. 21, 1986, pp. 133-134.
Yonezu et al., "An AlGaAs Window Structure Laser", IEEE Journal of Quantum Electronics, vol. QE-15, No. 8, Aug. 1979.

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