Method of making a semiconductor laser using superlattice disord

Details Method of making a semiconductor laser using superlattice disord Method of making a semiconductor laser using superlattice disord

1989-09-22

1990-09-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG72, 148DIG95, 148DIG160, 437190, 437133, 437161, 437184, H01L 2120, H01L 21203

Patent

active

049578790

ABSTRACT:
A buried heterojunction semiconductor laser appropriate for integration with other electronic circuitry and method of producing same, in which the width of a central stripe of the active region can be reduced beyond the physical size limitations of the connecting electrode so as to allow the semiconductor laser to oscillate in a stable manner and with low threshold current. The semiconductor laser is provided with a portion of the surface of the upper cladding layer located above the disordered active layer regions electrically connected with the upper cladding layer located above the nondisordered central stripe. As a result, the central stripe electrode can be of a width larger than that of the central stripe itself.

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