Method of making a semiconductor laser device

Details Method of making a semiconductor laser device Method of making a semiconductor laser device

1996-07-29

1997-07-15

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437126, 437133, 437141, 372 46, H01L 2120

Patent

active

056482957

ABSTRACT:
A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

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Dallesasse, et al., "Impurity-induced layer disordering in In.sub.0.5 (Al.sub.x Ga.sub.1-x) 0.5 P-InGaP quantum-well heterostructure: Visible-spectrum-buried heterostructure lasers," Jul. 15, 1989, J. Appl. Phys. vol. 66, pp. 482-487.
Meehan, et al., "Zn disordering of Ga.sub.0.5 In.sub.0.5 P-(Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P quantum well heterostructure grown by metalorganic chemical vapor deposition," Appl. Phys. Letter, vol. 54, May 22, 1989, pp. 2136-2138.

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