Method of making a semiconductor laser by liquid phase epitaxial

Details Method of making a semiconductor laser by liquid phase epitaxial Method of making a semiconductor laser by liquid phase epitaxial

1981-05-21

1983-04-26

Ozaki, G.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29576E, 148171, 148172, H01L 21208

Patent

active

043808611

ABSTRACT:
In a semiconductor laser comprising an active layer epitaxially formed on a semiconductor substrate and at least a current limiting layer which defines a current injection region of a stripe shape,

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Botez et al., "Constricted Double-Heterostructure (AlGa) As Diode Lasers", Appl. Phys. Lett. 32(4), 2/15/78, pp. 261-263.

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