Method of making a semiconductor laser by continuous liquid phas

Details Method of making a semiconductor laser by continuous liquid phas Method of making a semiconductor laser by continuous liquid phas

1986-12-31

1988-03-15

Ozaki, George T.

Fishing, trapping, and vermin destroying

357 17, 372 46, 437130, 437152, H01L 21208

Patent

active

047313455

ABSTRACT:
A method of making a semiconductor device for producing or amplifying electromagnetic radiation, more particularly a semiconductor laser, has a substrate which has a mesashaped raised portion. On either side of the mesa there is located a blocking layer of a conductivity type opposite to that of the substrate. On the blocking layer are formed a first passive layer of the same conductivity type as the substrate, an active layer and a second passive layer of a conductivity type opposite to that of the substrate. According to the invention, the blocking layer also extends over the mesa, which is connected by diffusion from at least the first passive layer to the blocking layer.

REFERENCES:
patent: 4149175 (1979-04-01), Inoue
patent: 4185256 (1980-01-01), Scifres et al.
patent: 4366568 (1982-12-01), Shimizu et al.
patent: 4404678 (1983-09-01), Aiki et al.
patent: 4404730 (1983-09-01), Heimen
patent: 4569721 (1986-02-01), Hayakawa et al.
patent: 4629519 (1986-12-01), Van Oirschot
patent: 4653057 (1987-03-01), Van Oirschot

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