Method of making a semiconductor laser

Details Method of making a semiconductor laser Method of making a semiconductor laser

1992-11-06

1994-09-13

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437126, 437130, 437133, 437228, 372 43, 372 45, H01L 2120

Patent

active

053468546

ABSTRACT:
A semiconductor laser including a compound semiconductor substrate of an n-type, a semiconductor laser chip region defined at a center portion of an upper portion of the compound semiconductor substrate and provided at its front and rear surfaces with mirror surfaces for oscillating laser beams, and a pair of guide regions defined at opposite sides of the chip region, respectively, to be in contact with the semiconductor laser chip region. The chip region has a shape of a hexahedron. Together with the front and rear surfaces of the chip region, the guide regions define a cavity for coupling the chip region with external elements at the compound semiconductor substrate. The semiconductor laser also includes a first electrode formed over the chip region and guide regions and adapted to receive an electric power for generating laser beams and a second electrode formed beneath the semiconductor substrate and adapted to receive the electric power for generating laser beams, together with the first electrode.

REFERENCES:
patent: 4675074 (1987-06-01), Wada et al.
patent: 4731344 (1988-03-01), Canning et al.
patent: 5159603 (1992-10-01), Kim

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